32th Diamond Symposium Program

Date: Nov. 14th-16th, 2018

Venue: The University of Electro-Communications

Nov. 14th
Oral session 1

 スペース 10:00~11:40  Char: H. Kato (AIST)
△ 101 Fabrication of single orientation epitaxial diamond(111) grown on Ir(111)/α-Al2O3(0001)
○ Jin Kitazaki1, Kazuhiro Suzuki2, Atsuhito Sawabe1(1Aoyama Gakuin Univ.,2TOPLAS ENGINEERING)
△ 102 Synthesis of Diamond Thin Film on Si Substrate by Selective Growth and Shape Control Technique
○Ino Keisuke, Isshiki hideo, Sakai Reo, Mori Toshihiro (The Univ. of Electro-Communications)
103 Homoepitaxial growth of high purity diamond (111) films
○ Tokuyuki Teraji, Kenji Watanabe (NIMS)
104 3-D observation of high quality HPHT diamond single crystal by Synchrotron section topography
○ Satoshi Masuya1, Hitoshi Sumiya2, Makoto Kasu1 (1Saga Univ., 2Sumitomo Electric Industries, Ltd.)
△ 105 Etch pit formation of diamond for detecting leakage current inducing defects
○Takehiro Shimaoka, Kimiyoshi Ichikawa, Satoshi Koizumi, Kenji Watanabe, Tokuyuki Teraji (NIMS)
 
11:40~13:00 Lunch

Oral session 2

 スペース 13:00~14:20 Char: T. Machida (The Univ. Tokyo)
△ 106 2DHG diamond MOSFETs by applying high voltage: Cut Off Frequency fT = 31 GHz, Output power density Pout = 3.8 W/mm
○Ken Kudara, Kawarada Hiroshi (Waseda Univ.)
△ 107 New Seawater Communication Method using Diamond Electrolyte Solution Gate FET
○K. Tadenuma,Y. Iyama,M. Kajiya,S. Falina, M. Syamsul,Y. H. Chang, Y. Shintani, H. Kawarada (Waseda Univ.)
108 Variation and Stabilization of Forward Characteristics of Diamond Schottky Diode
○Kimiyoshi Ichikawa, Takehiro Shimaoka, Satoshi Koizumi, Tokuyuki Teraji (NIMS)
△ 109 Electron emission property of diamond diodes fabricated on p-type substrates with different boron concentration
○T. Honbu1, T. Makino2 , H. Kato2, M. Ogura2, H. Okushi2, S. Yamasaki2, D. Takeuchi1, 2, I. Shoji1(1Chuo Univ.,2AIST)
 
14:20~14:40 Break

Oral session 3

 スペース 14:40~16:20 Char: Y. Miyamoto (AIST)
110 Three type C/Sn nanostructures formed by laser vaporization
○Fumio Kokai, Yutaka Tomita, Mitsuaki Shimogaki, Hiroya Kawase, Akira Koshio (Mie Univ.)
111 Study on degradation mechanisms of large area graphene mobility via lock-in thermography
○Hideaki Nakajima, Yuki Okigawa, Takahiro Morimoto, Yoshiue Ikuta, Takatoshi Yamada, Toshiya Okazaki (AIST)
112 N-type conduction of potassium-doped bilayer graphene
○Takatoshi Yamada,Yuki Okigawa,Masataka Hasegawa (AIST)
△ 113 Direct synthesis of carbon conductive film on a quartz substrate
○Kizashi Nagata1, Yuri Wado1, Hirotaka Higashino1, Takatoshi Yamada2, Toru Kuzumaki1(1Tokai Univ., 2AIST)
114 Characterization of electrical properties of CVD graphene grown on Ir(111)/α-Al2O3(0001)
○Masaya Niki, Atsushi Sakurai, Jin Kitazaki, Hideyuki Kodama, Takeshi Watanabe, Atsuhito Sawabe, Shinji Koh (Aoyama Gakuin Univ.)
 
16:20~16:30 Break

Poster session

 スペース 16:30~18:00
P1-01 Fabrication of boron-doped diamond film by bias-enhanced nucleation method
〇 Shinichi Kusaka1, Junya Yaita2, Takeshi Watanabe3, Susumu Sato4, Mutsuko Hatano2, Yasuaki Einaga1,5 (1Keio Univ., 2Tokyo Inst. Tech., 3Aoyama Gakuin Univ., 4Saitama Inst. Tech., JST-ACCEL)
P1-02 Surface modification of diamond electrode via electron-beam grafting
〇 Yoshiki Kimoto, Takeshi Kondo, Toshifumi Tojo, Makoto Yuasa (Tokyo Univ. Science)
P1-03 Enhancement of Electric Double Layer Capacitance in Boron-Doped Diamond Electrodes by Anodic Oxidation
〇 Keisuke Natsui1, Kazuaki Takagi1, Yasuaki Einaga1,5 (1Keio Univ., 5JST-ACCEL)
P1-04 Electrochemical characteristics of CVD-grown graphene electrodes for enzymatic biofuel cells applications
〇 Keishuu Miki, Akihiro Kato, Takeshi Watanabe, Shinji Koh (Aoyama Gakuin Univ.)
P1-05 Florien doped amorphous carbon coating for bacterial biosensors
〇 Kudo Kosei, Abe Tomoko, Hirakuri Kenzi, Ohgoe Yasuharu (Tokyo Denki Univ.)
P1-06 Effect of nitrogen content DLC for cell adhesion and behavior of NIH-3T3
〇 Yuichiro Nakazato, Akihiko Homma,Hirakuri Kenzi, Toshiyuki Yaguchi, Ohgoe Yasuharu (Tokyo Denki Univ.)
P1-07 Fabrication of sulfur-functionalized polymer materials by surface photochemical modification
〇 Takako Nakamura, Tsuguyori Ohana, Tetsuo Tsuchiya(AIST)
P1-08 Nanodiamond Application as a Thermal Stabilizer
○Atsushi Kume, Kouichi Umemoto, Hisayoshi Ito(Daicel Corp.)
P1-09 Introduction of Amino Group Directly Bound to Nanodiamond Surface
○ Masahiro Nishikawa(Daicel Corp.)
P1-10 Evaluation of Friction characteristics of DLC film against polymer material
〇 Norihiro Kurosawa, Ryo Mikami, Sadao Takeuchi (Nippon Inst. Tech.)
P1-11 Effect of surface layer on termination of diamond surface
〇 Akira Osaki, Haruki Uchiyama, Masafumi Inaba, Sigeru Kishimoto, Yutaka Ohno (Nagoya Univ.)
P1-12 Evaluation of wear characteristics of single crystal diamond using wheel type wear tester
〇 Kou Kurosawa1, Shouhei Horikawa1, Hitoshi Sumiya2, Sadao Takeuchi1 (1Nippon Inst. Tech., 2Sumitomo Electric Industries)
P1-13 Evaluation of fracture strength of single crystal diamond using indentation tester
〇 Kou Kurosawa1, Koudai Abe1, Hitoshi Sumiya2, Sadao Takeuchi1 (1Nippon Inst. Tech., 2Sumitomo Electric Industries)
P1-14 Report on dynamic friction of diamond coat
〇 MASATAKA TOMITA (Uinon Tool Co.)
P1-15 Heat Resistance of Si-N-DLC Films Deposited by Spattering-PBII Hybrid Process
○Mohammed A Melih Anas, Keita Yamada, Shuichi Watanabe (Nippon Inst. Tech.)
P1-16 Fabrication of anti-sticking Diamond-like Carbon coatings
〇 Jun Enomoto, Yuki Hirata, Hiroki Akasaka, Naoto Ohtake (Tokyo Inst. Tech.)
P1-17 Deposition of DLC films onto inner wall of metal tubes by nanopulse plasma CVD
〇 Keitaro Takenami, Ryota Takamura, Yuki Hirata, Hiroki Akasaka, Naoto Ohtake (Tokyo Inst. Tech.)
P1-18 Evaluation of optical properties of multilayer DLC film fabricated by PIG-PECVD method
〇 Yusuke Kondo, Yoshiharu Kakehi, Kazuo Satoh(ORIST)
P1-19 Development of long term estimation method of corrosion rate on amorphous carbon films using SPR phenomenon
〇 Naoki Sugihara, Yuki Hirata, Naoto Ohtake, Hiroki Akasaka (Tokyo Inst. Tech.)
P1-20 Influence of thermal diffusion boron doping on DLC film structure and electrical properties
〇 Alya Amira, Keita Fujimoto, Kenji Hirakuri, Akihiko Homma, Yasuharu Ohgoe (Tokyo Denki Univ.)
P1-21 Relevance of surface characteristics to film structure on various types of DLC films
〇 Tatsuya Mayama1, Noboru Miyata2, Masanori Hiratsuka3, Hideki Nakamori3, Akihiko Homma1, Kenji Hirakuri1, Yasuharu Ohgoe1, (1, Tokyo Denki Univ., 2CROSS, 3Nanotec Corp.)

 

 

Nov. 15th
Oral session 4

 スペース 9:20~10:40 Char: Y. Miyashita (Mitsubishi Materials Co.)
△ 201 Effect of Boron-doping on Diamond Coating Tools
〇Yuki Akahoshi1, Hideaki Takashima1, Kazutaka Fujiwara1 Sadao Takeuchi2 (1Mitsubishi Materials Corp., 2Nippon Inst. Tech.)
202 Improvement of lubricity of carbon layer formed by laser irradiation on single crystal SiC surface
○ Go Koizumi, Koki Ogawa, Yuko Aono, Atsushi Hirata (Tokyo Inst. Tech.)
203 Metal-DLC composite films fabricated by cold spray technique using DLC coated metal particles
○ Nana Okimura, Nobuhisa Ata, Yuki Hirata, Naoto Ohtake, Hiroki Akasaka (Tokyo Inst. Tech.)
204 Annealing effects on the properties of silicon and nitrogen doped DLC films
○ Hideki Nakazawa1, Kazuki Nakamura1, Hiroya Osanai1, Yasuyuki Kobayashi1, Yoshiharu Enta1, Yushi Suzuki1, Maki Suemitsu2 (1Hirosaki Univ., 2Tohoku Univ.)
 
10:40~11:00 Break

Oral session 5

 スペース 11:00~12:00 Char: D. Takeuchi (AIST)
△ 205 Conditions of Operating Superconducting Boron-doped Diamond Josephson Junction above Liquid Helium Temperature
○ Aoi Morishita1, Taisuke Kageura1, Ikuto Tsuyuzaki1, Shotaro Amano1, Yoshihiko Takano2, Shuuichi Ooi2, Shunichi Arisawa2, Hiroshi Kawarada (1Waseda Univ., 2NIMS)
△ 206 High-mobility transistor with an h-BN/diamond heterostructure
○ Yosuke Sasama1,2, Katsuyoshi Komatsu1, Satoshi Moriyama1, Masataka Imura1, Tokuyuki Teraji1, Kenji Watanabe1, Takashi Taniguchi1, Takashi Uchihashi1, Yamaguchi Takahide1,2 (1NIMS, 2Univ. Tsukuba)
207 Reducing the intrinsic energy loss in diamond mechanical resonator toward ultra-high quality factor
○ Meiyong Liao, Haihua Wu, Liwen Sang, Tokuyuki Teraji, Masataka Imura, Yasuo Koide (NIMS)
 
12:00~13:00 Lunch

Special oral session

 スペース 13:00~14:40 Char: H. Isshiki(The Univ. Electro-Communications), A. Hirata (Tokyo Inst. Tech.)
208 【Invited talk】Is graphene hydrophobic, or not?
Jun Nakamura(The Univ. Electro-Communications)
△ 209 Ab initio study of electronic structure for understanding of impurity induced states in c-BN and diamond
○ Hiroki Yamashita, Taishi Haga, Yoshitaka Fujimoto, Susumu Saito (Tokyo Inst. Tech.)
△ 210 Oxygen reduction reaction activity for N-doped graphene nanoclusters
○ Haruyuki Matsuyama , Jun Nakamura (The Univ. Electro-Communications)
△ 211 Molecular Dynamics Analysis of Carbon Onion under Compressive Load
○ Ryuji Ota, Yuko Aono, Atsushi Hirata(Tokyo Inst. Tech.)
 
14:40~15:00 Break

Poster session

 スペース 15:00~16:30
P2-01 Formation of All-solid-state lithium-ion battery using graphene thin film of originating C60 as a negative electrode
〇 Ryota Tamura, Masaki Kanko, Kizasi Nagata, Toru Kuzumaki (Tokai Univ.)
P2-02 The effect of metal catalyst structures on CNT film structures synthesized by thermal CVD method
〇 Ryosuke Kokubo, Bunpei Morita, Ryuta Ayukawa, Toru Kuzumaki (Tokai Univ.)
P2-03 Analysis of mechanism of high strength by microstructure observation of Joule-heated CNT yarn
〇 Takaya Tezuka, Norio Mori, Hiroyuki Tomonari, Toru Kuzumaki (Tokai Univ.)
P2-04 Toward to high mobility for thermal CVD graphene on h-BN fabricated by wet transfer process
〇 Yuki Okigawa1, Takatoshi Yamada1, Kazuhiro Kirihara1, Takashi Taniguchi2, Kenji Watanabe2, Masataka Hasegawa1 (1AIST, 2NIMS)
P2-05 Reuse of Ir(111)/α-Al2O3(0001) substrate in graphene CVD growth
〇 Atsushi Sakurai, Masaya Niki, Jin Kitazaki, Hideyuki Kodama, Takeshi Watanabe, Atsuhito Sawabe, Shinji Koh (Aoyama Gakuin Univ.)
P2-06 Characterization of carbon powder synthesized by detonation reaction of hydrocarbon gas
〇 Senna Kamiyama1, Hisao Kanda2, Osamu Fukunaga1, Sadao Takeuchi1, (1Nippon Inst. Tech. , 2NIMS)
P2-07 Deposition and characterization of a-BCN film by PVD method
〇 Hiroyuki Taniguchi, Yoshinao Iwamoto, Masao Kawagoe, Yuki Hirata, Hiroi Akasaka, Naoto Ohtake (Tokyo Inst. Tech.)
P2-08 Cathodoluminescence of Si-doped single crystal β-Ga2O3 grown by the floating zone method
〇 Hideyuki Watanabe, Hirotaka Yamaguchi, Yasuko Ozaki, Toshimitsu Ito(AIST)
P2-09 Fabrication of High Quality Heteroepitaxial Diamond by Direct Current Plasma CVD with Heated Cathode
〇 Kazushi Nogami1, Kazuhiro Suzuki2, Atsuhito Sawabe1(1Aoyama Gakuin Univ.,2TOPLAS ENGINEERING)
P2-10 Modification of the characteristics of CVD diamond surface by high pressure and high temperature treatment
〇 Rei Fukuta, Naoya Yamamoto, Fumitaro Ishikawa, Masashi Matsushita , Hiroaki Ohfuji, Toru Shinmei, Tetsuo Irifune (Ehime Univ.)
P2-11 High rate growth of diamond (100) film by nitrogen-doped plasma CVD
〇 Naohide Fujita1, Koichi Ito1, Tsubasa Matsumoto1, Yoshiyasu Kojima2, Osamu Ariyada2, Tokuda Norio1, Inokuma Takao1 (1Kanazawa Univ., 2ARIOS)
P2-12 Hot-filament CVD growth on hetero epitaxial diamond: Effects of tungsten impurities
〇 Shinya Ohmagari, Nobuteru Tsubouchi, Hideaki Yamada, Hitoshi Umezawa, Akiyoshi Chayahara, Daisuke Takeuchi (AIST)
P2-13 Low temperature growth of diamond using pulse microwave plasma CVD -Effects of pulse frequency and duty cycle -
〇 Maruko Takuya, Yukihiro Sakamoto (Chiba Inst. Tech.)
P2-14 Formation and Characterization of Nanocrystalline Diamonds by Chemical Vapor Synthesis using TiPS
〇 Mori Toshihiro, Isshiki Hideo, Ino Keisuse, Sakai Reo(The Univ. Electro-Communications)
P2-15 Attempt to make diamond mosaic for single crystal growth for radiation detector
〇 Shogo Ito1, Junichi H. Kaneko1, Shintaro Hirano1, Akiyoshi Chayahara2, Yoshiaki Mokuno2, Hitoshi Umezawa2(1, Hokkaido Univ., 2AIST)
P2-16 Evaluation of heat resistance of boron-doped diamond film
〇 Hanwen Song, Sadao Takeuchi (Nippon Inst. Tech.)
P2-17 Characterization of heteroepitaxial diamond grown on a-plane sapphire substrate
〇 Yuki Kawamata, Kokichi Fujita, Kengo Nishiguchi, Yutaka Kimura, Seong-Woo Kim (Adamant Namiki Precision Jewel Co., Ltd.)
P2-18 Electrical properties of IIa-type CVD-diamond substrate implanted by B ions at 1000°C temperature
〇 Yuhei Seki, Yasushi Hoshino, Jyoji Nakata (Kanagawa Univ.)
P2-19 Dislocation analysis of homoepitaxial diamond (001) film grown with oxygen feeding by synchrotron radiation light X-ray topography
〇 Shinichi Shikata1, Yuka Matsuyama1, Tokuyuki Teraji2 (1Kwansei Gakuin Univ., 2NIMS)
P2-20 XANE and EXAFS analysis of P doped diamond
〇 S. Shikata1, K. Yamaguchi1, A. Fujiwara1, Y. Tamenori2, K. Tsuruta2, T.Yamada3, S. S. Nicley4, K. Haenen4, S. Koizumi5 (1Kwansei Gakuin Univ., 2Japan Synchrotron Radiation, 3AIST, 4Hasselt Univ., 5NIMS)
P2-21 Fabrication and evaluation of p-type diamond film by MPCVD method using boron chip
〇 Reo Sakai, Hideo Isshiki, Keisuke Ino, Toshihiro Mori (The Univ. Electro-Communications)
P2-22 Evaluation of two dimensional hole gas diamond device by vacuum gap gate structure
〇 Masafumi Inaba1, Hiroshi Kawarada2, Yutaka Ohno1(1Nagoya Univ., 2Waseda Univ.)
P2-23 Quality and Band Offset of the AlN thin films on Diamond (111) Deposited by RF-N-plasma-assisted MBE
〇 Shozo Kono, Taisuke Kageura, Miki Kajiya, Kanami Kato, Jorge J. Buendia, Sora Kawai, Hiroshi Kawarada (Waseda Univ.)
P2-24 Vertical-Type 2DHG Diamond MOSFET:High current density and low on-resistance with Overlapping Gate Electrode Structure
〇 Jun Nishimura, Hirosi Kawarada (Waseda Univ.)
P2-25 Signal-to-noise ratio of nuclear spin detection with an NV-spin ensemble
〇 Toyofumi Ishikawa1, Yoshizawa Akio1, Satoshi Kashiwaya1,2, Mawatari Yasunori1, Watanabe Hideyuki1 (1AIST, 2Nagoya Univ.)
P2-26 Electrical properties of nitrogen doped DLC under thermal annealing
〇 Akihiro Nomura, Akihiko Homma, Kenji Hirakuri, Yasuharu Ohgoe (Tokyo Denki Univ.)

Plenary lecture

16:40~17:40 Char: A. Hirata (Tokyo Inst. Tech.)

「Novel development of high-pressure synthetic diamond」

Hitoshi Sumiya (Advanced Materials Laboratory, Sumitomo Electric Industries, Ltd.)

Banquet

University Center 18:00~

 

 

Nov. 16th
Oral session 6

 スペース 9:20~10:20 Char: S. Onoda(QST)
301 Extension of the coherence time of dressed states generated in an NV center in diamond
○ Hiroki Morishita1, Toshiyuki Tashima1, Daisuke Mima1, Hiromitsu Kato2, Toshiharu Makino2, Satoshi Yamasaki2, Masanori Fujiwara1, Norikazu Mizuochi1 (1Kyoto Univ., 2AIST)
302 Influence of immersion oil fluorescence on the quality of single photons generated from a diamond NV center
○ Yoshizawa Akio1, Ishikawa Toyofumi1, Kashiwaya Satoshi1,2, Mawatari Yasunori1, Watanabe Hideyuki1 (1AIST, 2Nagoya Univ.)
303 NV Center Formation in Nanoparticle by Electron Irradiation for Quantum Sensing and Imaging
○Hiroshi Abe1, Akinori TAKEYAMA1, Daiki TERADA2, Shinobu ONODA1, Masahiro SHIRAKAWA1, Takeshi OHSHIMA1 (1QST, 2Kyoto Univ.)
 
10:20~10:40 Break

Oral session 7

 スペース 10:40~12:00 Char: H. Morishita(Kyoto Univ.QST)
304 Implantation of organic compound ions for fabrication of multiple NV center qubits
○ Onoda Shinobu1, Moriyoshi Haruyama1,2, Taisei Higuchi1,2, Wataru Kada2, Atsuya Chiba1, Yoshimi Hirano1, Tokuyuki Teraji3, Ryuji Igarashi1, Sora Kawai4, Hiroshi Kawarada4, Yu Ishii4, Ryosuke Fukuda4, Takashi Tanii4, Junichi Isoya5, Takeshi Ohshima1, Osamu Hanaizumi2, (1QST, 2Gunma Univ., 3NIMS, 4Waseda Univ., 5Univ. Tsukuba)
△ 305 1H-NMR Using a Shallow NV Center in Nitrogen Terminated Diamond
○Tatsuishi Tetsuya, Hiroshi Kawarada (Waseda Univ.)
306 Fabrication of quantum sensor array for direct sensing of high electric field in diamond JFETs
○ Bang Yang1, Kwangsoo Kim1, Marek E. Schmidt2, Toshiharu Makino3, Hiromitsu Kato3, Masahiko Ogura3, Daisuke Takeuchi3, Satoshi Yamasaki3, Hiroshi Mizuta2, Mutsuko Hatano1, Takayuki Iwasaki1, (1Tokyo Inst. Tech., 2JAIST, 3AIST)
△ 307 Temperature sensing with NV center ensembles
Kan Hayashi1, Yuichiro Matsuzaki2, Takashi Taniguchi3, Takaaki Shimo-Oka1, Ippei Nakamura4, Shinobu Onoda5, Takeshi Ohshima 5, Hiroki Morishita1, Masanori Fujiwara1, Shiro Saito2, Norikazu Mizuochi1(1Kyoto Univ., 2NTT, 3NIMS, 4Osaka Univ., 5QST)

■ excellent presentation award

△ Candidates for excellent presentation award